BSC100N06LS3G datasheet(3/9 Pages) INFINEON

3 / 9 page

BSC100N06LS3 G

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Dynamic characteristics

Input capacitance

C iss

2600

3500

Output capacitance

C oss

500

660

Reverse transfer capacitance

Crss

Turn-on delay time

t d(on)

Rise time

t r

Turn-off delay time

t d(off)

Fall time

t f

Gate Charge Characteristics

Gate to source charge

Q gs

Gate charge at threshold

Q g(th)

Gate to drain charge

Q gd

Switching charge

Q sw

Gate charge total

Q g

Gate plateau voltage

V plateau

4.0

Gate charge total

Q g

V DD=30 V, I D=50 A,

V GS=0 to 10 V

Output charge

Q oss

V DD=30 V, V GS=0 V

Reverse Diode

Diode continuous forward current

I S

Diode pulse current

I S,pulse

200

Diode forward voltage

V SD

V GS=0 V, I F=50 A,

T j=25 °C

0.9

1.2

Reverse recovery time

t rr

Reverse recovery charge

Q rr

5) See figure 16 for gate charge parameter definition

V R=30 V, I F=50A,

di F/dt =100 A/µs

T C=25 °C

Values

V GS=0 V, V DS=30 V,

f =1 MHz

V DD=30 V, V GS=10 V,

I D=50 A, R G,ext=3 W

V DD=30 V, I D=50 A,

V GS=0 to 4.5 V

Rev. 2.3

page 3

2013-05-21

BSC100N06LS3G 数据表(PDF) 3 Page - Infineon Technologies AG

BSC100N06LS3G 数据表(HTML) 3 Page - Infineon Technologies AG

Html Pages

1 2 3 4 5 6 7 8 9

数据表下载