BSC100N06LS3G datasheet(1/9 Pages) INFINEON

部件名	BSC100N06LS3G

功能描述	OptiMOSTM3 Power-Transistor

PDF	9 Pages

Scroll/Zoom	100%

制造商	INFINEON [Infineon Technologies AG]

网页	http://www.infineon.com

标志

1 / 9 page

Type

BSC100N06LS3 G

OptiMOSTM3 Power-Transistor

Features

• Ideal for high frequency switching and sync. rec.

• Optimized technology for DC/DC converters

• Excellent gate charge x R

DS(on) product (FOM)

• Superior thermal resistance

• N-channel, logic level

• 100% avalanche tested

• Pb-free plating; RoHS compliant

• Qualified according to JEDEC

1) for target applications

• Halogen-free according to IEC61249-2-21

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Unit

Continuous drain current

I D

V GS=10 V, T C=25 °C

50

A

V GS=10 V, T C=100 °C

36

V GS=4.5 V, T C=25 °C

41

V GS=4.5 V,

T C=100 °C

26

V GS=10 V, T A=25 °C,

R thJA=50 K/W

2)

12

Pulsed drain current

3)

I D,pulse

T C=25 °C

200

Avalanche energy, single pulse

4)

E AS

I D=50 A, R GS=25 W

22

mJ

Gate source voltage

V GS

±20

V

4) See figure 13 for more detailed information

Value

1) J-STD20 and JESD22

3) See figure 3 for more detailed information

2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

V

DS

60

V

R

DS(on),max

10

m

W

I

D

50

A

Product Summary

Type

BSC100N06LS3 G

Package

PG-TDSON-8

Marking

100N06LS

Rev. 2.3

page 1

2013-05-21

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制造商	部件名	数据表	功能描述
Infineon Technologies A...	BSC100N06LS3G	328Kb / 9P	OptiMOS3 Power-Transistor Rev. 2.2 2010-08-31

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BSC100N06LS3G 数据表(PDF) 1 Page - Infineon Technologies AG

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