STM8AL3LE8x datasheet(73/133 Pages) STMICROELECTRONICS

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STM8AL3LE8x 数据表(PDF) 73 Page - STMicroelectronics

部件名	STM8AL3LE8x

功能描述	Automotive 8-bit ultra-low-power MCU, 64 KB Flash, EEPROM, RTC, AES, LCD, timers, USARTs, I2C, SPIs, ADC, DAC, COMPs

PDF	133 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

73 / 133 page

DocID027180 Rev 5

73/133

STM8AL31E8x STM8AL3LE8x

Electrical parameters

119

Figure 13. Typical IDD(RUN) from RAM vs. VDD (HSI clock source), fCPU =16 MHz(1)

1. Typical current consumption measured with code executed from RAM.

1. CPU executing typical data processing

2. The run from RAM consumption is approximated with the linear formula:

IDD(run_from_RAM) = Freq. * 95 µA/MHz + 250 µA

3. Guaranteed by characterization results.

4. Oscillator bypassed (HSEBYP = 1 in CLK_ECKCR). When configured for external crystal, the HSE consumption

(IDD HSE) must be added. Refer to Table 32.

5. The run from Flash consumption is approximated with the linear formula:

IDD(run_from_Flash) = Freq. * 200 µA/MHz + 330 µA

6. Oscillator bypassed (LSEBYP = 1 in CLK_ECKCR). When configured for external crystal, the LSE consumption

(IDD LSE) must be added. Refer to Table 33

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