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STM8AL3LE8x 数据表(PDF) 90 Page - STMicroelectronics |
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STM8AL3LE8x 数据表(HTML) 90 Page - STMicroelectronics |
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90 / 133 page  Electrical parameters STM8AL31E8x STM8AL3LE8x 90/133 DocID027180 Rev 5 Low speed internal RC oscillator (LSI) In the following table, data are based on characterization results, not tested in production, unless otherwise specified. Figure 24. Typical LSI clock source frequency vs. VDD 9.3.5 Memory characteristics TA = -40 to 125 °C unless otherwise specified. Table 35. LSI oscillator characteristics Symbol Parameter Conditions(1) 1. VDD = 1.65 V to 3.6 V, TA = -40 to 125 °C unless otherwise specified. Min. Typ. Max. Unit fLSI Frequency - 26 38 56 kHz tsu(LSI) LSI oscillator wakeup time - - - 200(2) 2. Guaranteed by design. µs D(LSI) LSI oscillator frequency drift(3) 3. This is a deviation for an individual part, once the initial frequency has been measured. 0 °C ≤TA ≤ 85 °C -12 - 11 % Table 36. RAM and hardware registers Symbol Parameter Conditions Min. Typ. Max. Unit VRM Data retention mode (1) 1. Minimum supply voltage without losing data stored in RAM (in Halt mode or under Reset) or in hardware registers (only in Halt mode). Guaranteed by characterization results. Halt mode (or Reset) 1.65 - - V |
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