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数据搜索系统，热门电子元器件搜索 |
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STM8AL3L8x 数据表(PDF) 87 Page - STMicroelectronics |
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STM8AL3L8x 数据表(HTML) 87 Page - STMicroelectronics |
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87 / 131 page  DocID027179 Rev 6 87/131 STM8AL318x STM8AL3L8x Electrical parameters 117 Figure 23. Typical HSI frequency vs. VDD Table 34. HSI oscillator characteristics Symbol Parameter Conditions(1) Min. Typ. Max. Unit fHSI Frequency VDD = 3.0 V - 16 - MHz ACCHSI HSI oscillator user trimming accuracy Trimmed by the application for any VDD and TA conditions -1 - 1 % HSI oscillator accuracy (factory calibrated) VDD ≤1.8 V≤ VDD ≤ 3.6 V -40 °C ≤TA ≤ 125 °C -5 - 5 TRIM HSI user trimming step(2) Trimming code ≠ multiple of 16 - 0.4 0.7(2) % Trimming code = multiple of 16 - - ± 1.5(2) tsu(HSI) HSI oscillator setup time (wakeup time) -- 3.7 6 (3) µs IDD(HSI) HSI oscillator power consumption - - 100 140(3) µA 1. VDD = 3.0 V, TA = -40 to 125 °C unless otherwise specified. 2. The trimming step differs depending on the trimming code. It is usually negative on the codes which are multiples of 16 (0x00, 0x10, 0x20, 0x30...0xE0). Refer to the AN3101 “STM8L15x internal RC oscillator calibration” application note for more details. 3. Guaranteed by design. |
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