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STM32F091CB 数据表(PDF) 61 Page - STMicroelectronics |
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STM32F091CB 数据表(HTML) 61 Page - STMicroelectronics |
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61 / 127 page ![]() DocID026284 Rev 3 61/127 STM32F091xB STM32F091xC Electrical characteristics 99 Typical current consumption The MCU is placed under the following conditions: • VDD = VDDA = 3.3 V • All I/O pins are in analog input configuration • The Flash memory access time is adjusted to fHCLK frequency: – 0 wait state and Prefetch OFF from 0 to 24 MHz – 1 wait state and Prefetch ON above 24 MHz • When the peripherals are enabled, fPCLK = fHCLK • PLL is used for frequencies greater than 8 MHz • AHB prescaler of 2, 4, 8 and 16 is used for the frequencies 4 MHz, 2 MHz, 1 MHz and 500 kHz respectively Table 32. Typical and maximum current consumption from the VBAT supply Symbol Parameter Conditions Typ @ VBAT Max(1) Unit TA = 25 °C TA = 85 °C TA = 105 °C IDD_VBAT RTC domain supply current LSE & RTC ON; “Xtal mode”: lower driving capability; LSEDRV[1:0] = '00' 0.5 0.5 0.6 0.7 0.9 1.0 1.0 1.3 1.8 µA LSE & RTC ON; “Xtal mode” higher driving capability; LSEDRV[1:0] = '11' 0.8 0.8 0.9 1.0 1.2 1.3 1.4 1.7 2.2 1. Data based on characterization results, not tested in production. |
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