STM32F091CB datasheet(76/127 Pages) STMICROELECTRONICS

76 / 127 page

Electrical characteristics

STM32F091xB STM32F091xC

76/127

DocID026284 Rev 3

6.3.11

EMC characteristics

Susceptibility tests are performed on a sample basis during device characterization.

Functional EMS (electromagnetic susceptibility)

While a simple application is executed on the device (toggling 2 LEDs through I/O ports).

the device is stressed by two electromagnetic events until a failure occurs. The failure is

indicated by the LEDs:

•

Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until

a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.

•

FTB: A Burst of Fast Transient voltage (positive and negative) is applied to VDD and

VSS through a 100 pF capacitor, until a functional disturbance occurs. This test is

compliant with the IEC 61000-4-4 standard.

A device reset allows normal operations to be resumed.

The test results are given in Table 48. They are based on the EMS levels and classes

defined in application note AN1709.

Designing hardened software to avoid noise problems

EMC characterization and optimization are performed at component level with a typical

application environment and simplified MCU software. It should be noted that good EMC

performance is highly dependent on the user application and the software in particular.

Therefore it is recommended that the user applies EMC software optimization and

prequalification tests in relation with the EMC level requested for his application.

Table 47. Flash memory endurance and data retention

Symbol

Parameter

Conditions

Min(1)

1. Data based on characterization results, not tested in production.

Unit

NEND

Endurance

TA = –40 to +105 °C

kcycle

tRET

Data retention

1 kcycle(2) at TA = 85 °C

2. Cycling performed over the whole temperature range.

Year

1 kcycle(2) at TA = 105 °C

10 kcycle(2) at TA = 55 °C

Table 48. EMS characteristics

Symbol

Parameter

Conditions

Level/

Class

VFESD

Voltage limits to be applied on any I/O pin

to induce a functional disturbance

VDD = 3.3 V, LQFP100, TA = +25 °C,

fHCLK = 48 MHz,

conforming to IEC 61000-4-2

VEFTB

Fast transient voltage burst limits to be

applied through 100 pF on VDD and VSS

pins to induce a functional disturbance

VDD = 3.3 V, LQFP100, TA = +25°C,

fHCLK = 48 MHz,

conforming to IEC 61000-4-4

STM32F091CB 数据表(PDF) 76 Page - STMicroelectronics

STM32F091CB 数据表(HTML) 76 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

数据表下载