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STM32F412RG 数据表(PDF) 77 Page - STMicroelectronics |
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STM32F412RG 数据表(HTML) 77 Page - STMicroelectronics |
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77 / 193 page ![]() DocID028087 Rev 4 77/193 STM32F412xE/G Electrical characteristics 161 PD Power dissipation at TA = 85°C for range 6 or TA = 105°C for range 7(8) UFQFPN48 - - 625 mW WLCSP64 - - 392 LQFP64 - - 425 LQFP100 - - 465 LQFP144 571 UFBGA100 - - 351 UFBGA144 - - 416 TA Ambient temperature for range 6 Maximum power dissipation –40 - 85 °C Low power dissipation(9) –40 - 105 Ambient temperature for range 7 Maximum power dissipation –40 - 105 Low power dissipation(9) –40 - 125 TJ Junction temperature range Range 6 –40 - 105 Range 7 –40 - 125 1. VDD/VDDA minimum value of 1.7 V with the use of an external power supply supervisor (refer to Section 3.18.2: Internal reset OFF). 2. When the ADC is used, refer to Table 71: ADC characteristics. 3. If VREF+ pin is present, it must respect the following condition: VDDA-VREF+ < 1.2 V. 4. It is recommended to power VDD and VDDA from the same source. A maximum difference of 300 mV between VDD and VDDA can be tolerated during power-up and power-down operation. 5. Only the DM (PA11) and DP (PA12) pads are supplied through VDDUSB. For application where the VBUS (PA9) is directly connected to the chip, a minimum VDD supply of 2.7V is required. (some application examples are shown in appendix B) 6. Guaranteed by test in production 7. To sustain a voltage higher than VDD+0.3, the internal Pull-up and Pull-Down resistors must be disabled 8. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax. 9. In low power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax. Table 15. General operating conditions (continued) Symbol Parameter Conditions Min Typ Max Unit |
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