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STM32F412RG 数据表(PDF) 93 Page - STMicroelectronics |
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STM32F412RG 数据表(HTML) 93 Page - STMicroelectronics |
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93 / 193 page  DocID028087 Rev 4 93/193 STM32F412xE/G Electrical characteristics 161 Figure 24. Typical VBAT current consumption (LSE and RTC ON/LSE oscillator “low power” mode selection) Table 34. Typical and maximum current consumptions in VBAT mode Symbol Parameter Conditions(1) Typ Max(2) Unit TA = 25 °C TA = 85 °C TA = 105 °C VBAT = 1.7 V VBAT= 2.4 V VBAT = 3.3 V VBAT = 3.6 V VBAT = 3.6 V IDD_VBAT Backup domain supply current Low-speed oscillator (LSE in low- drive mode) and RTC ON 0.74 0.87 1.04 1.11 3.0 5.0 µA Low-speed oscillator (LSE in high- drive mode) and RTC ON 1.52 1.70 1.97 2.09 3.8 5.8 RTC and LSE OFF 0.04 0.04 0.05 0.05 2.0 4.0 1. Crystal used: Abracon ABS07-120-32.768 kHz-T with a CL of 6 pF for typical values. 2. Guaranteed by characterization, not tested in production. |
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