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STM32F412RG 数据表(PDF) 138 Page - STMicroelectronics |
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STM32F412RG 数据表(HTML) 138 Page - STMicroelectronics |
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138 / 193 page  Electrical characteristics STM32F412xE/G 138/193 DocID028087 Rev 4 Table 73. ADC accuracy at fADC = 30 MHz(1) 1. Better performance could be achieved in restricted VDD, frequency and temperature ranges. Symbol Parameter Test conditions Typ Max(2) 2. Guaranteed by characterization, not tested in production. Unit ET Total unadjusted error fADC = 30 MHz, RAIN < 10 kΩ, VDDA = 2.4 to 3.6 V, VREF = 1.7 to 3.6 V, VDDA −VREF < 1.2 V ±2 ±5 LSB EO Offset error ±1.5 ±2.5 EG Gain error ±1.5 ±4 ED Differential linearity error ±1 ±2 EL Integral linearity error ±1.5 ±3 Table 74. ADC accuracy at fADC = 36 MHz(1) 1. Better performance could be achieved in restricted VDD, frequency and temperature ranges. Symbol Parameter Test conditions Typ Max(2) 2. Guaranteed by characterization, not tested in production. Unit ET Total unadjusted error fADC =36 MHz, VDDA = 2.4 to 3.6 V, VREF = 1.7 to 3.6 V VDDA −VREF < 1.2 V ±4 ±7 LSB EO Offset error ±2 ±3 EG Gain error ±3 ±6 ED Differential linearity error ±2 ±3 EL Integral linearity error ±3 ±6 Table 75. ADC dynamic accuracy at fADC = 18 MHz - limited test conditions(1) Symbol Parameter Test conditions Min Typ Max Unit ENOB Effective number of bits fADC =18 MHz VDDA = VREF+= 1.7 V Input Frequency = 20 kHz Temperature = 25 °C 10.3 10.4 - bits SINAD Signal-to-noise and distortion ratio 64 64.2 - dB SNR Signal-to-noise ratio 64 65 - THD Total harmonic distortion - -72 -67 1. Guaranteed by characterization, not tested in production. Table 76. ADC dynamic accuracy at fADC = 36 MHz - limited test conditions(1) Symbol Parameter Test conditions Min Typ Max Unit ENOB Effective number of bits fADC = 36 MHz VDDA = VREF+ = 3.3 V Input Frequency = 20 kHz Temperature = 25 °C 10.6 10.8 - bits SINAD Signal-to noise and distortion ratio 66 67 - dB SNR Signal-to noise ratio 64 68 - THD Total harmonic distortion - -72 -70 1. Guaranteed by characterization, not tested in production. |
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