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STGD4M65DF2 数据表(PDF) 9 Page - STMicroelectronics |
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STGD4M65DF2 数据表(HTML) 9 Page - STMicroelectronics |
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9 / 19 page ![]() STGD4M65DF2 Electrical characteristics DocID028676 Rev 4 9/19 Figure 20: Short-circuit time and current vs. VGE Figure 21: Switching times vs. collector current Figure 22: Switching times vs. gate resistance Figure 23: Reverse recovery current vs. diode current slope Figure 24: Reverse recovery time vs. diode current slope Figure 25: Reverse recovery charge vs. diode current slope IGBT170320161123RRQ 370 365 360 355 350 0 150 300 450 600 750 di/dt (A/µs) Qrr (nC) VCC= 400 V, VGE= 15 V, IF= 4 A, Tj = 175 °C |
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