November 2016

DocID028676 Rev 4

1/19

This is information on a product in full production.

www.st.com

STGD4M65DF2

Trench gate field-stop IGBT, M series 650 V, 4 A low loss

Datasheet - production data

Figure 1: Internal schematic diagram

Features



6 µs of short-circuit withstand time





Tight parameter distribution



Safer paralleling



Low thermal resistance



Soft and very fast recovery antiparallel diode

Applications



Motor control



UPS



PFC

Description

This device is an IGBT developed using an

advanced proprietary trench gate field-stop

structure. The device is part of the M series

IGBTs, which represent an optimal balance

between inverter system performance and

efficiency where low-loss and short-circuit

functionality are essential. Furthermore, the

parameter distribution result in safer paralleling

operation.

Table 1: Device summary

Order code

Marking

Package

Packing

STGD4M65DF2

G4M65DF2

DPAK

Tape and reel