STGD4M65DF2

Electrical characteristics

DocID028676 Rev 4

5/19

Table 6: IGBT switching characteristics (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Turn-on delay time

Ω

(see Figure 29: " Test

circuit for inductive load

switching")

12

-

ns

Current rise time

6.9

-

ns

Turn-on current slope

480

-

A/µs

Turn-off-delay time

86

-

ns

Current fall time

120

-

ns

Eon(1)

Turn-on switching energy

0.040

-

mJ

Turn-off switching energy

0.136

-

mJ

Total switching energy

0.176

-

mJ

Turn-on delay time

Ω,

(see Figure 29: " Test circuit

for inductive load switching")

11.6

-

ns

Current rise time

8

-

ns

Turn-on current slope

410

-

A/µs

Turn-off-delay time

85

-

ns

Current fall time

211

-

ns

Eon(1)

Turn-on switching energy

0.067

-

mJ

Turn-off switching energy

0.210

-

mJ

Total switching energy

0.277

-

mJ

Short-circuit withstand time

6

-

µs

10

-

µs

Notes:

Table 7: Diode switching characteristics (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Reverse recovery time

(see Figure 29: " Test circuit

for inductive load switching")

-

133

-

ns

Reverse recovery charge

-

140

-

nC

Reverse recovery current

-

5

-

A

Peak rate of fall of reverse

-

520

-

A/µs

Reverse recovery energy

-

15

-

µJ

Reverse recovery time

di/dt = 800 A/µs

(see Figure 29: " Test circuit

for inductive load switching")

-

236

-

ns

Reverse recovery charge

-

370

-

nC

Reverse recovery current

-

6.6

-

A

Peak rate of fall of reverse

-

378

-

A/µs

Reverse recovery energy

-

32

-

µJ