FLASH

AS29F010

Micross Components reserves the right to change products or specifications without notice.

19

AS29F010

Rev. 2.6 11/10

ERASE AND PROGRAMMING PERFORMANCE

TYP

1

MAX

2

UNIT

Chip/Sector Erase Time

1.0

15

sec

Excludes 00h programming prior to erasure

4

Byte Programming Time

7

300

μs

Chip Programming Time

3

0.9

6.25

sec

PARAMETER

LIMITS

COMMENTS

Excludes system-level overhead

5

NOTES:

1. Typical program and erase times assume the following conditions: 25°C, 5.0V V

assume checkerboard pattern.

2. Under worst case conditions of 90°C, V

3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster

than the maximum byte program time listed. If the maximum byte program time given is exceeded, only then does the device set DQ5 = 1.

See the section on DQ5 for further information.

4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.

5. System-level overhead is the time required to execute the four-bus-cycle command sequence for programming. See Table 4 for further

information on command definitions.

6. The device has a minimum guaranteed erase cycle endurance of 1 million cycles.

LATCHUP CHARACTERISTIC

PARAMETER

MIN

MAX

-1.0V

-100mA

+100mA

PIN CAPACITANCE

PARAMETER

CONDITIONS

SYMBOL

MAX

UNIT

Input Capacitance

15

pF

Output Capacitance

15

pF

Control Pin Capacitance

15

pF

NOTES:

1. Sampled, not 100% tested.

2. Test conditions T

DATA RETENTION

PARAMETER

CONDITIONS

MIN

UNIT

150°C

10

Years

125°C

20

Years

Minimum Pattern Data Retention Time