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ZLED7025 数据表(PDF) 23 Page - Integrated Device Technology |
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ZLED7025 数据表(HTML) 23 Page - Integrated Device Technology |
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23 / 26 page ![]() ZSLS7025 Datasheet © 2016 Integrated Device Technology, Inc. 23 April 20, 2016 kHz 63 100 22 ' f f ≈ × = 2 2 1 TH _ OVP OVP R ) R R ( V V + × = The recommended switching frequency, 20KHz < f < 200KHz, according to the switching frequency, is inversely proportional to the inductor value; for example, select L1 =100 μH. Therefore (28) The saturation current of the inductor must exceed the input peak current (IIN_PEAK). 4.4.7 R1 and R2 for Setting OVP Set VOVP = VOUT + 5V = 45V (29) Choose R 2 =10kΩ, then R 1 = 470kΩ. 4.4.8 Q1 External MOSFET and D1 Diode Power losses in the Q1 external MOSFET should be minimized. Conduction losses increase with RDS(on), and switching losses increase with gate/drain charge and frequency. Therefore, selecting a MOSFET with low RDS(on) and low gate/drain charge for the Q1 external MOSFET will help to optimize efficiency. The MOSFET’s current rating must be higher than the input peak current IIN_PEAK. Q1 must have a VDS rating that exceeds the maximum over-voltage protection (OVP) level configured for the application. The average and peak current of the diode D1 must exceed the output average current and input peak current. The diode’s maximum reverse voltage rating must exceed the over-voltage protection of the application. |
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