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AM29PLI60C 数据表(PDF) 18 Page - Advanced Micro Devices

部件名 AM29PLI60C
功能描述  16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory
PDF  44 Pages
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制造商  AMD [Advanced Micro Devices]
网页  http://www.amd.com
标志 AMD - Advanced Micro Devices

AM29PLI60C 数据表(HTML) 18 Page - Advanced Micro Devices

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June 12, 2002
Am29PL160C
17
Programming is allowed in any sequence and across
sector boundaries. A bit cannot be programmed
from a “0” back to a “1”. Attempting to do so may
halt the operation and set DQ5 to “1,” or cause the
Data# Polling algorithm to indicate the operation was
successful. However, a succeeding read will show that
the data is still “0”. Only erase operations can convert
a “0” to a “1”.
Unlock Bypass Command Sequence
The unlock bypass feature allows the system to pro-
gram bytes or words to the device faster than using the
standard program command sequence. The unlock
bypass command sequence is initiated by first writing
two unlock cycles. This is followed by a third write
cycle containing the unlock bypass command, 20h.
The device then enters the unlock bypass mode. A
two-cycle unlock bypass program command sequence
is all that is required to program in this mode. The first
cycle in this sequence contains the unlock bypass pro-
gram command, A0h; the second cycle contains the
program address and data. Additional data is pro-
grammed in the same manner. This mode dispenses
with the initial two unlock cycles required in the stan-
dard program command sequence, resulting in faster
total programming time. Table 10 shows the require-
ments for the command sequence.
During the unlock bypass mode, only the Unlock By-
pass Program and Unlock Bypass Reset commands
are valid. To exit the unlock bypass mode, the system
must issue the two-cycle unlock bypass reset com-
mand sequence. The first cycle must contain the data
90h; the second cycle the data 00h. Addresses are
don’t care for both cycles. The device then returns to
reading array data.
Figure 1 illustrates the algorithm for the program oper-
ation. See the Program/Erase Operations table in “AC
Characteristics” for parameters, and to Figure 15 for
timing diagrams.
Note: See Table 10 for program command sequence.
Figure 1.
Program Operation
Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase
command sequence is initiated by writing two unlock
cycles, followed by a set-up command. Two additional
unlock write cycles are then followed by the chip erase
command, which in turn invokes the Embedded Erase
algorithm. The device does not require the system to
preprogram prior to erase. The Embedded Erase algo-
rithm automatically preprograms and verifies the entire
memory for an all zero data pattern prior to electrical
erase. The system is not required to provide any con-
trols or timings during these operations. Table 10
shows the address and data requirements for the chip
erase command sequence.
Any commands written to the chip during the Embed-
ded Erase algorithm are ignored.
The system can determine the status of the erase op-
eration by using DQ7, DQ6, or DQ2. See “Write
Operation Status” for information on these status bits.
When the Embedded Erase algorithm is complete, the
START
Write Program
Command Sequence
Data Poll
from System
Verify Data?
No
Yes
Last Address?
No
Yes
Programming
Completed
Increment Address
Embedded
Program
algorithm
in progress



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