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STM32F411CC 数据表(PDF) 76 Page - STMicroelectronics |
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STM32F411CC 数据表(HTML) 76 Page - STMicroelectronics |
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76 / 149 page  Electrical characteristics STM32F411xC STM32F411xE 76/149 DocID026289 Rev 6 Figure 20. Typical VBAT current consumption (LSE in low-drive mode and RTC ON) Table 31. Typical and maximum current consumptions in VBAT mode Symbol Parameter Conditions(1) Typ Max(2) Unit TA = 25 °C TA = 85 °C TA = 105 °C TA = 125 °C VBAT = 1.7 V VBAT= 2.4 V VBAT = 3.3 V VBAT = 3.6 V IDD_VBAT Backup domain supply current Low-speed oscillator (LSE in low- drive mode) and RTC ON 0.7 0.8 1.0 3 5 6.8 µA Low-speed oscillator (LSE in high- drive mode) and RTC ON 1.5 1.6 1.9 3.8 5.8 8.6 RTC and LSE OFF 0.1 0.1 0.1 2 4 5.8 1. Crystal used: Abracon ABS07-120-32.768 kHz-T with a CL of 6 pF for typical values. 2. Guaranteed by characterization results. |
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