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STM32F411CC 数据表(PDF) 97 Page - STMicroelectronics |
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STM32F411CC 数据表(HTML) 97 Page - STMicroelectronics |
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97 / 149 page ![]() DocID026289 Rev 6 97/149 STM32F411xC STM32F411xE Electrical characteristics 123 Note: It is recommended to add a Schottky diode (pin to ground) to analog pins which may potentially inject negative currents. 6.3.16 I/O port characteristics General input/output characteristics Unless otherwise specified, the parameters given in Table 53 are derived from tests performed under the conditions summarized in Table 14. All I/Os are CMOS and TTL compliant. Table 53. I/O static characteristics Symbol Parameter Conditions Min Typ Max Unit VIL FT, TC and NRST I/O input low level voltage 1.7 V≤VDD≤3.6 V - - 0.3VDD(1) V BOOT0 I/O input low level voltage 1.75 V≤VDD ≤3.6 V, -40 °C≤TA ≤125 °C -- 0.1VDD+0.1 (2) 1.7 V≤VDD ≤3.6 V, 0 °C≤TA ≤125 °C -- VIH FT, TC and NRST I/O input high level voltage(5) 1.7 V≤VDD≤3.6 V 0.7VDD(1 ) -- V BOOT0 I/O input high level voltage 1.75 V≤VDD ≤3.6 V, -40 °C≤TA ≤125 °C 0.17VDD +0.7(2) -- 1.7 V≤VDD ≤3.6 V, 0 °C≤TA ≤125 °C VHYS FT, TC and NRST I/O input hysteresis 1.7 V≤VDD≤3.6 V - 10% VDD(3) -V BOOT0 I/O input hysteresis 1.75 V≤VDD ≤3.6 V, -40 °C≤TA ≤125 °C -100 - mV 1.7 V≤VDD ≤3.6 V, 0 °C≤TA ≤125 °C Ilkg I/O input leakage current (4) VSS ≤VIN ≤VDD -- ±1 µA I/O FT/TC input leakage current (5) VIN = 5 V - - 3 |
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