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STMPE321 数据表(PDF) 34 Page - STMicroelectronics |
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STMPE321 数据表(HTML) 34 Page - STMicroelectronics |
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34 / 40 page ![]() Electrical specifications STMPE321 34/40 Doc ID 15791 Rev 3 10 Electrical specifications 10.1 Capacitive sensing characteristics Table 12. DC electrical characteristics (-40 - 85 °C unless otherwise stated) Symbol Parameter Test condition Value Unit Min Typ Max VCC Core supply voltage 1.65 - 1.95 V Ihibernate HIBERNATE current No touch sensing capability -1.8 3.0 µA Isleep SLEEP current Touch sensing active, no touch -27 43 µA Iactive ACTIVE current 100% touch activity - 280 470 µA VIL Input voltage low state VCC=1.8 V -0.3V - 0.2VCC V VIH Input voltage high state VCC=1.8 V 0.8Vcc - VCC+0.3V V VOL Output voltage low state VCC=1.8 V, IOUT=4mA -0.3V - 0.25VCC V VOH Output voltage high state VCC=1.8OUTV, IOUT =4mA 0.75Vcc - VCC+0.3V V VOL (I2C) Output voltage low state IOL=4 mA -0.3V - 0.25VCC V Ileakage Input leakage (GPIO) GPIO as input, VIN = 2.0 V -- 0.5 µA Input leakage (SCL, SDA, RST) VIN = VCC = 1.95 V - - 0.5 µA Table 13. Capacitive sensing characteristics Symbol Parameter Test condition Value Unit Min Typ Max Res Capacitive measurement resolution Aref = not connected - 40 - fF DR Dynamic range Aref = not connected - 5.1 - pF L Linearity of sensor Aref = not connected Maximum deviation calculated from full scale capacitance measurement data -10 - % |
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