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STTH5R06-Y 数据表(PDF) 3 Page - STMicroelectronics

部件名 STTH5R06-Y
功能描述  Low reverse recovery current
PDF  9 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STTH5R06-Y 数据表(HTML) 3 Page - STMicroelectronics

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STTH5R06-Y
Characteristics
Doc ID 17655 Rev 1
3/9
Table 5.
Dynamic electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
trr
Reverse recovery time
Tj = 25 °C
IF = 0.5 A, Irr = 0.25 A,
IR = 1 A
20
ns
IF = 1 A,
dIF/dt = - 50 A/µs,
VR = 30 V
35
IRM
Reverse recovery current
Tj = 125 °C
IF = 5 A,
dIF/dt = - 200 A/µs,
VR = 400 V
4.5
6
A
Sfactor
Softness factor
0.5
-
Qrr
Reverse recovery charges
110
nC
tfr
Forward recovery time
Tj = 25 °C
IF = 5 A
dIF/dt = 40 A/µs
VFR = 2.5 V
220
ns
VFP
Forward recovery voltage
4.5
V
Figure 1.
Average forward power dissipation
versus average forward current
Figure 2.
Forward voltage drop versus
forward current
Figure 3.
Relative variation of thermal
impedance junction to case versus
pulse duration
Figure 4.
Peak reverse recovery current
versus dIF/dt (typical values)
P(W)
0
2
4
6
8
10
12
14
16
0
1
23
45
67
I
(A)
F(AV)
T
δ=tp/T
tp
δ = 0.05 δ = 0.1
δ = 0.2
δ = 0.5
δ = 1
I
(A)
FM
0.0
2.5
5.0
7.5
10.0
12.5
15.0
17.5
20.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
Tj=125 °C
(Maximum values)
Tj=125 °C
(Typical values)
Tj=25 °C
(Maximum values)
V
(V)
FM
Z/R
th(j-c)
th(j-c)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
Single pulse
t (s)
p
I
(A)
RM
0
1
2
3
4
5
6
7
8
9
0
50
100
150
200
250
300
350
400
450
500
IF=IF(AV)
VR=400 V
Tj=125 °C
dI /dt(A/µs)
F



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