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STTH5R06-Y 数据表(PDF) 4 Page - STMicroelectronics

部件名 STTH5R06-Y
功能描述  Low reverse recovery current
PDF  9 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STTH5R06-Y 数据表(HTML) 4 Page - STMicroelectronics

  STTH5R06-Y Datasheet HTML 1Page - STMicroelectronics STTH5R06-Y Datasheet HTML 2Page - STMicroelectronics STTH5R06-Y Datasheet HTML 3Page - STMicroelectronics STTH5R06-Y Datasheet HTML 4Page - STMicroelectronics STTH5R06-Y Datasheet HTML 5Page - STMicroelectronics STTH5R06-Y Datasheet HTML 6Page - STMicroelectronics STTH5R06-Y Datasheet HTML 7Page - STMicroelectronics STTH5R06-Y Datasheet HTML 8Page - STMicroelectronics STTH5R06-Y Datasheet HTML 9Page - STMicroelectronics  
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Characteristics
STTH5R06-Y
4/9
Doc ID 17655 Rev 1
Figure 5.
Reverse recovery time versus dIF/dt
(typical values)
Figure 6.
Reverse recovery charges versus
dIF/dt (typical values)
Figure 7.
Softness factor versus dIF/dt
(typical values)
Figure 8.
Relative variations of dynamic
parameters versus junction
temperature
t (ns)
rr
0
10
20
30
40
50
60
70
80
0
50
100
150
200
250
300
350
400
450
500
IF=IF(AV)
VR=400 V
Tj=125 °C
dI /dt(A/µs)
F
Q (nC)
rr
0
20
40
60
80
100
120
140
160
0
50
100
150
200
250
300
350
400
450
500
IF=IF(AV)
VR=400 V
Tj=125 °C
dI /dt(A/µs)
F
S factor
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
50
100
150
200
250
300
350
400
450
500
IF=IF(AV)
VR=400 V
Tj=125 °C
dI /dt(A/µs)
F
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
25
50
75
100
125
IF=IF(AV)
VR=400 V
Reference: Tj=125 °C
IRM
SFACTOR
QRR
T (°C)
j
Figure 9.
Transient peak forward voltage
versus dIF/dt (typical values)
Figure 10.
Forward recovery time versus dIF/dt
(typical values)
V
(V)
FP
0
2
4
6
8
10
12
14
050
100
150
200
250
300
350
400
450
500
IF=IF(AV)
Tj=125 °C
dI /dt(A/µs)
F
t (ns)
fr
0
20
40
60
80
100
120
140
160
0
50
100
150
200
250
300
350
400
450
500
IF=IF(AV)
VFR=2.5V
Tj=125 °C
dI /dt(A/µs)
F



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