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STTH8ST06 数据表(PDF) 1 Page - STMicroelectronics

部件名 STTH8ST06
功能描述  Very low switching losses
PDF  9 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STTH8ST06 数据表(HTML) 1 Page - STMicroelectronics

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This is information on a product in full production.
July 2015
DocID024150 Rev 2
1/9
9
STTH8ST06
600 V tandem extra fast diode
Datasheet
production data
Features
• High voltage rectifier
• Tandem diodes in series
• Very low switching losses
• Insulated device with internal ceramic
• Equal thermal conditions for both 300 V diodes
• Static and dynamic equilibrium of internal
diodes are warranted by design
• Insulated package:
– Insulated voltage: 2500 VRMS sine
Description
This device is part of ST's second generation of
600 V tandem diodes. It has ultralow switching-
losses with a minimized QRR that makes it perfect
for use in circuits working in hard-switching mode.
In particular the VF/QRR trade-off positions this
device between standard ultrafast diodes and
silicon-carbide Schottky rectifiers in terms of
price/performance ratio.
The device offers a new positioning giving more
flexibility to power-circuit designers looking for
good performance while still respecting cost
constraints.
Featuring ST's Turbo 2 600 V technology, the
device is particularly suited as a boost diode in
continuous conduction mode power factor
correction circuits.
Table 1. Device summary
Symbol
Value
IF(AV)
8 A
VRRM
600 V
trr (typ)
13 ns
IRM (typ)
2 A
VF (typ)
2.5 V
IFRM
40 A
Tj (max)
175 °C
www.st.com


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