STTH8ST06 datasheet(3/9 Pages) STMICROELECTRONICS

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STTH8ST06

Characteristics

Table 5. Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ. Max. Unit

trr

Reverse recovery time

Tj = 25 °C

IF = 1 A, VR = 30 V,

dIF/dt = -50 A/µs

-20

IF = 8 A, VR = 400 V,

dIF/dt = -200 A/µs

-13

IRM

Reverse recovery current

Tj = 125 °C

IF = 8 A, VR = 400 V,

dIF/dt = -200 A/µs

-2

2.6

Softness factor

0.9

QRR

Reverse recovery charge

Tj = 25 °C

Tj = 125 °C

Figure 1. Average forward power dissipation

versus average forward current

Figure 2. Forward voltage drop versus forward

current (typical values)

F(AV)(W)

234

789

δ=tp/T

δ=0.05

δ=0.1

=0.2

=0.5

δ=1

IF(AV)(A)

FM(A)

0.1

1.0

10.0

100.0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

6.5

7.0

j=150 °C

j=125 °C

j=25 °C

VFM(V)

Figure 3. Relative variation of thermal

impedance, junction to case, versus pulse

duration

Figure 4. Peak reverse recovery current versus

dIF/dt (typical values)

th(j-c)/Rth(j-c)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

Single pulse

tp()

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