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STTH8ST06 数据表(PDF) 4 Page - STMicroelectronics |
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STTH8ST06 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 9 page ![]() Characteristics STTH8ST06 4/9 DocID024150 Rev 2 Figure 5. Reverse recovery time versus dIF/dt (typical values) Figure 6. Reverse recovery charges versus dIF/dt (typical values) Q RR(nC) 0 5 10 15 20 25 30 35 40 45 0 100 200 300 400 500 600 700 800 900 1000 V R=400 V T j=125 °C I F=0.5 x IF(AV) I F=IF(AV) I F=2 x IF(AV) dIF/dt(A/µs) Figure 7. Reverse recovery softness factor versus dIF/dt (typical values) Figure 8. Relative variations of dynamic parameters versus junction temperature S FACTOR 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 100 200 300 400 500 600 700 800 900 1000 dIF/dt(A/µs) I F=IF(AV) V R=400 V T j=125 °C dIF/dt(A/µs) 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 25 50 75 100 125 IF=IF(AV) VR=400 V Reference: Tj=125 °C IRM SFACTOR QRR Tj(°C) Figure 9. Junction capacitance versus reverse voltage applied (typical values) Figure 10. Relative variation of non-repetitive peak surge forward current versus pulse duration C(pF) 1 10 100 1 10 100 1000 F=1 MHz V OSC=30 mVRMS T j=25 °C V R (V) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.1 1.0 10.0 I (t )/I (10ms) FSM p FSM , t(ms) p sinusoidal waveform |
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