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STP9N65M2 数据表(PDF) 1 Page - STMicroelectronics |
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STP9N65M2 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 23 page ![]() This is information on a product in full production. July 2014 DocID025975 Rev 2 1/23 STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2 N-channel 650 V, 0.79 Ω typ., 5 A MDmesh M2 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet - production data Figure 1. Internal schematic diagram Features • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected Applications • Switching applications Description These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to the strip layout associated to an improved vertical structure, the devices exhibit both low on-resistance and optimized switching characteristics. They are therefore suitable for the most demanding high efficiency converters. TO-220FP 1 2 3 1 3 TAB DPAK TO-220 3 2 1 TAB IPAK 1 2 3 TAB AM15572v1 , TAB Order codes VDS RDS(on) max ID STD9N65M2 650 V 0.9 Ω 5 A STF9N65M2 STP9N65M2 STU9N65M2 Table 1. Device summary Order codes Marking Package Packaging STD9N65M2 9N65M2 DPAK Tape and reel STF9N65M2 TO-220FP Tube STP9N65M2 TO-220 STU9N65M2 IPAK www.st.com |
类似零件编号 - STP9N65M2 |
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类似说明 - STP9N65M2 |
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