STP9N65M2 datasheet(5/23 Pages) STMICROELECTRONICS

部件名	STP9N65M2

功能描述	Extremely low gate charge

PDF	23 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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5 / 23 page

DocID025975 Rev 2

5/23

STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2

Electrical characteristics

Table 8. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

ISDM

(1)

Pulse width limited by safe operating area.

Source-drain current (pulsed)

VSD

(2)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

VGS = 0, ISD = 5 A

1.6

trr

Reverse recovery time

ISD = 5 A, di/dt = 100 A/µs

VDD = 60 V (see Figure 20)

276

Qrr

Reverse recovery charge

1.7

µC

IRRM

Reverse recovery current

12.5

trr

Reverse recovery time

ISD = 5 A, di/dt = 100 A/µs

VDD = 60 V, Tj = 150 °C

(see Figure 20)

312

Qrr

Reverse recovery charge

1.9

µC

IRRM

Reverse recovery current

12.4

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