Electrical characteristics

STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2

4/23

DocID025975 Rev 2

2

Electrical characteristics

Table 5. On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Drain-source

breakdown voltage

650

V

Zero gate voltage

drain current

1

µA

100

µA

Gate-body leakage

current

±10

µA

2

3

4

V

Static drain-source

on-resistance

0.79

0.9

Ω

Table 6. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Input capacitance

-315

-

pF

Output capacitance

-

18

-

pF

Reverse transfer

capacitance

-1-

pF

(1)

1.

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%

VDSS

Equivalent output

capacitance

-

109

-

pF

Intrinsic gate

resistance

f = 1 MHz open drain

-

6.6

-

Ω

Total gate charge

(see Figure 19)

-10

-

nC

Gate-source charge

-

2.5

-

nC

Gate-drain charge

-

5

-

nC

Table 7. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Turn-on delay time

(see Figure 18 and Figure 23)

-7.5

-

ns

Rise time

-

6.6

-

ns

Turn-off delay time

-

22.5

-

ns

Fall time

-

18

-

ns