STD45P4LLFAG datasheet(3/16 Pages) STMICROELECTRONICS

部件名	STD45P4LLFAG

功能描述	Automotive-grade P-channel -40 V, 12 mΩ typ., -50 A STripFET™F6 Power MOSFET in a DPAK package

PDF	16 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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STD45P4LLF6AG

Electrical ratings

DocID027807 Rev 2

3/16

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

-40

VGS

Gate-source voltage

±18 V

Drain current (continuous) at Tcase = 25 °C

-50

Drain current (continuous) at Tcase = 100 °C

-31

IDM(1)

Drain current (pulsed)

-200

PTOT

Total dissipation at Tcase = 25 °C

EAS(2)

Single pulse avalanche energy

160

Tstg

Storage temperature

–55 to 150

°C

Tj(3)

Operating junction temperature

Notes:

(1) Pulse width is limited by safe operating area.

(2) starting Tj = 25 °C, RG = 47 Ω, ID(min) = -25 A.

(3) HTRB performed at Tj = 175 °C, VDS = 100% V(BR)DSS.

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

2.14

°C/W

Rthj-amb

Thermal resistance junction-ambient

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