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STD45P4LLFAG 数据表(PDF) 5 Page - STMicroelectronics

部件名 STD45P4LLFAG
功能描述  Automotive-grade P-channel -40 V, 12 mΩ typ., -50 A STripFET™F6 Power MOSFET in a DPAK package
PDF  16 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STD45P4LLFAG 数据表(HTML) 5 Page - STMicroelectronics

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STD45P4LLF6AG
Electrical characteristics
DocID027807 Rev 2
5/16
Table 7: Source-drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
-50
A
ISDM(1)
Source-drain current
(pulsed)
-
-200
A
VSD(2)
Forward on voltage
VGS = 0 V, ISD = -50 A
-
-1.3
V
trr
Reverse recovery time
ISD = -50 A, di/dt = -100 A/µs,
VDD = -32 V (see Figure 15: "Test
circuit for inductive load
switching and diode recovery
times")
-
27.5
ns
Qrr
Reverse recovery
charge
-
24.5
nC
IRRM
Reverse recovery
current
-
-1.8
A
Notes:
(1) Pulse width is limited by safe operating area.
(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.



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