STD45P4LLFAG datasheet(4/16 Pages) STMICROELECTRONICS

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Electrical characteristics

STD45P4LLF6AG

4/16

DocID027807 Rev 2

Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 4: Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0 V, ID = -250 µA

-40

IDSS

Zero gate voltage drain

current

VGS = 0 V, VDS = -40 V

-1

µA

VGS = 0 V, VDS = -40 V,

Tcase = 125 °C

-10

IGSS

Gate-body leakage current

VDS = 0 V, VGS = -18 V

-100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = -250 µA

-1

-2.5

RDS(on)

Static drain-source on-

resistance

VGS = -10 V, ID = -25 A

mΩ

VGS = -4.5 V, ID = -25 A

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = -25 V, f = 1 MHz,

VGS = 0 V

3525

Coss

Output capacitance

345

Crss

Reverse transfer

capacitance

240

Total gate charge

VDD = -20 V, ID = -50 A,

VGS = -10 V (see Figure 14:

"Gate charge test circuit")

65.5

Qgs

Gate-source charge

11.5

Qgd

Gate-drain charge

Table 6: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = -20 V, ID = -25 A

RG = 4.7

Ω, VGS = -10 V (see

Figure 13: "Switching times test

circuit for resistive load" )

Rise time

35.5

td(off)

Turn-off delay time

63.5

Fall time

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