STDLED623 datasheet(1/18 Pages) STMICROELECTRONICS

部件名	STDLED623

功能描述	Very low intrinsic capacitance

PDF	18 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

1 / 18 page

This is information on a product in full production.

September 2013

DocID025178 Rev 1

1/18

18

STDLED623,

STULED623

N-channel 620 V, 3.0

Ω typ., 3.0 A Power MOSFET

in DPAK and IPAK packages

Datasheet

- production data

Figure 1. Internal schematic diagram

Features

• 100% avalanche tested

• Extremely high dv/dt capability

• Very low intrinsic capacitance

• Improved diode reverse recovery

characteristics

• Zener-protected

Applications

• LED lighting applications

Description

These Power MOSFETs boast extremely low on-

resistance, superior dynamic performance and

high avalanche capability, making them suitable

for the buck-boost and flyback topology.

1

3

TAB

3

2

1

TAB

DPAK

IPAK

D(2,TAB)

G(1)

S(3)

AM01476v1

Order codes

VDS

RDS(on)

max.

ID

PTOT

STDLED623

620 V

< 3.6

Ω

3.0 A

45 W

STULED623

Table 1. Device summary

Order codes

Marking

Package

Packaging

STDLED623

LED623

DPAK

Tape and reel

STULED623

IPAK

Tube

www.st.com

Obsolete

Product(s)

- Obsolete

Product(s)

类似零件编号 - STDLED623

制造商	部件名	数据表	功能描述
STMicroelectronics	STDLED624	1Mb / 22P	N-channel 620 V, 2.2 Ω typ., 4.0 A Power MOSFET in DPAK, I2PAKFP, TO-220 and IPAK packages 21-Mar-2013
	STDLED625	1Mb / 18P	Gate charge minimized 28-Aug-2013
	STDLED625H	1Mb / 17P	Gate charge minimized 22-Mar-2013
	STDLED627	1Mb / 18P	N-channel 620 V, 0.95 Ω, 7.0 A Power MOSFET in D2PAK and in DPAK August 2013 Rev 1

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