DocID025178 Rev 1

5/18

STDLED623, STULED623

Electrical characteristics

The built-in back-to-back Zener diodes have specifically been designed to enhance not only

the device’s ESD capability, but also to make them safely absorb possible voltage transients

that may occasionally be applied from gate to source. In this respect the Zener voltage is

appropriate to achieve efficient and cost-effective intervention to protect the device’s

integrity. These integrated Zener diodes thus avoid the usage of external components.

Table 7. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Turn-on delay time

(see Figure 15)

-8

-

ns

Rise time

-

4.4

-

ns

Turn-off-delay time

-

21

-

ns

Fall time

-

22

-

ns

Table 8. Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

Source-drain current

-

2.2

A

(1)

1.

Pulse width limited by safe operating area.

Source-drain current (pulsed)

-

8.8

A

(2)

2.

Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.

Forward on voltage

-

1.6

V

Reverse recovery time

-

200

ns

Reverse recovery charge

-

900

nC

Reverse recovery current

-

9

A

Reverse recovery time

(see Figure 20)

-

240

ns

Reverse recovery charge

-

1150

nC

Reverse recovery current

-

10

A

Table 9. Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

Gate-source breakdown

voltage

30

-

-

V

Obsolete

Product(s)

- Obsolete

Product(s)