STDLED623 datasheet(4/18 Pages) STMICROELECTRONICS

4 / 18 page

Electrical characteristics

STDLED623, STULED623

4/18

DocID025178 Rev 1

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 5. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

620

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 620 V

VDS = 620 V, TC = 125 °C

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20 V

± 10

µA

VGS(th)

Gate threshold voltage VDS = VGS, ID = 50 µA

3.6

4.5

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 1.1 A

3.6

Table 6. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 50 V, f = 1 MHz, VGS = 0

350

Coss

Output capacitance

Crss

Reverse transfer

capacitance

-4.4

Co(tr)

(1)

Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when

VDS increases from 0 to 80% VDSS.

Equivalent

capacitance time

VGS = 0, VDS = 0 to 496 V

Intrinsic gate

resistance

f = 1 MHz open drain

Total gate charge

VDD = 496 V, ID = 2.7 A,

VGS = 10 V

(see Figure 16)

-15.5

Qgs

Gate-source charge

3.2

Qgd

Gate-drain charge

9.8

Obsolete

Product(s)

- Obsolete

Product(s)

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