STDLED625 datasheet(1/18 Pages) STMICROELECTRONICS

部件名	STDLED625

功能描述	Gate charge minimized

PDF	18 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

1 / 18 page

This is information on a product in full production.

August 2013

DocID025167 Rev 1

1/18

18

STDLED625,

STULED625

N-channel 620 V, 1.28

Ω typ., 5.0 A Power MOSFET

in DPAK and IPAK

Datasheet

− production data

Figure 1. Internal schematic diagram

Features

• 100% avalanche tested

• Extremely high dv/dt capability

• Gate charge minimized

• Very low intrinsic capacitance

• Improved diode reverse recovery

characteristics

• Zener-protected

Applications

• LED lighting applications

Description

These Power MOSFETs boast extremely low on-

resistance and very good dv/dt capability,

rendering them suitable for buck-boost and

flyback topologies.

D(2,TAB)

G(1)

S(3)

AM01476v1

1

3

2

1

DPAK

IPAK

Order codes

VDS

RDS(on)

max.

ID

PTOT

STDLED625

620 V

1.6

Ω

5.0 A

25 W

STULED625

70 W

Table 1. Device summary

Order codes

Marking

Package

Packaging

STDLED625

LED625

DPAK

Tape and reel

STULED625

IPAK

Tube

www.st.com

Obsolete

Product(s)

- Obsolete

Product(s)

类似零件编号 - STDLED625

制造商	部件名	数据表	功能描述
STMicroelectronics	STDLED625H	1Mb / 17P	Gate charge minimized 22-Mar-2013

More results

类似说明 - STDLED625

制造商	部件名	数据表	功能描述
Ruichips Semiconductor ...	RU4H10R	300Kb / 9P	N-Channel Advanced Power MOSFET Gate charge minimized
STMicroelectronics	STP3NK50Z	626Kb / 14P	Gate charge minimized 13-Aug-2013
	STDLED625H	1Mb / 17P	Gate charge minimized 22-Mar-2013
	STDLED656	1Mb / 22P	Gate charge minimized 26-Mar-2013
	STF11N65K3	815Kb / 13P	Gate charge minimized 03-Oct-2011
	STD3N40K3	990Kb / 16P	Gate charge minimized 24-Jul-2012
	STF16N50U	691Kb / 12P	Gate charge minimized 09-Sep-2010
	STQ1HN60K3-AP	1Mb / 14P	Gate charge minimized 09-Apr-2013
	STU3N45K3	838Kb / 14P	Gate charge minimized June 2013 Rev 3
	STW9NK95Z	312Kb / 12P	Gate charge minimized 03-Jul-2008