DocID025167 Rev 1

5/18

STDLED625, STULED625

Electrical characteristics

The built-in back-to-back Zener diodes have been specifically designed to enhance not only

the device’s ESD capability, but also to make them capable of safely absorbing any voltage

transients that may occasionally be applied from gate to source. In this respect, the Zener

voltage is appropriate to achieve efficient and cost-effective protection of device integrity.

The integrated Zener diodes thus eliminate the need for external components.

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Turn-on delay time

(see Figure 15)

-22

-

ns

Rise time

-

12

-

ns

Turn-off-delay time

-

49

-

ns

Fall time

-

20

-

ns

Table 7. Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

Source-drain current

-

5.5

A

(1)

1.

Pulse width limited by safe operating area.

Source-drain current (pulsed)

27

A

(2)

2.

Pulsed: pulse duration = 300 µs, duty cycle 1.5%.

Forward on voltage

-

1.5

V

Reverse recovery time

-290

ns

Reverse recovery charge

-

1900

nC

Reverse recovery current

-

13.5

A

Reverse recovery time

(see Figure 18)

-335

ns

Reverse recovery charge

-

2400

nC

Reverse recovery current

-

14.5

A

Table 8. Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

Gate-source breakdown

voltage

30

-

-

V

Obsolete

Product(s)

- Obsolete

Product(s)