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STDLED625 数据表(PDF) 3 Page - STMicroelectronics

部件名 STDLED625
功能描述  Gate charge minimized
PDF  18 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STDLED625 数据表(HTML) 3 Page - STMicroelectronics

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DocID025167 Rev 1
3/18
STDLED625, STULED625
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
620
V
VGS
Gate-source voltage
± 30
V
ID
Drain current (continuous) at TC = 25 °C
5.0(1)
1.
Limited only by maximum temperature allowed.
A
ID
Drain current (continuous) at TC = 100 °C
3.5(1)
A
IDM
(2)
2.
Pulse width limited by safe operating area.
Drain current (pulsed)
20.0(1)
A
PTOT
Total dissipation at TC = 25 °C
70
W
IAR
Avalanche current, repetitive or not-repetitive (pulse
width limited by TJ max.)
4.2
A
EAS
Single pulse avalanche energy
(starting TJ = 25 °C, ID = IAR, VDD = 50 V)
120
mJ
dv/dt(3)
3.
ISD ≤ ID, peak VDS ≤ V(BR)DSS, VDD = 80% V(BR)DSS.
Peak diode recovery voltage slope
12
V/ns
di/dt(3)
Diode reverse recovery current slope
400
A/µs
VISO
Insulation withstand voltage (AC)
V
TJ
Tstg
Operating junction temperature
Storage temperature
- 55 to 150
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
IPAK
DPAK
Rthj-case Thermal resistance junction-case max.
1.79
°C/W
Rthj-amb
Thermal resistance junction-amb max.
62.50
°C/W
Rthj-pcb
Thermal resistance junction-pcb max.
50
°C/W
TJ
Maximum lead temperature for
soldering purpose
300
°C/W
Obsolete
Product(s)
- Obsolete
Product(s)



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