STF12N50DM2

Electrical ratings

DocID026809 Rev 2

3/13

1

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

Gate-source voltage

±25

V

ID(1)

11

A

ID(1)

8

IDM(2)

Drain current (pulsed)

44

A

25

W

dv/dt (3)

Peak diode recovery voltage slope

40

V/ns

dv/dt (4)

MOSFET dv/dt ruggedness

50

V/ns

Insulation withstand voltage (RMS) from all three leads to

2500

V

Storage temperature range

-55 to 150

°C

Operating junction temperature range

Notes:

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Thermal resistance junction-case max

5

°C/W

Thermal resistance junction-amb max

62.5

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

Avalanche current, repetetive or not repetetive

2.5

A

320

mJ