STF12N50DM2 datasheet(5/13 Pages) STMICROELECTRONICS

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STF12N50DM2

Electrical characteristics

DocID026809 Rev 2

5/13

Table 8: Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

ISDM(1)

Source-drain current

(pulsed)

VSD (2)

Forward on voltage

VGS = 0 V, ISD = 11 A

1.6

trr

Reverse recovery

time

ISD = 11 A, di/dt = 100 A/µs,

VDD = 60 V (see Figure 16:

"Test circuit for inductive load

switching and diode recovery

times")

140

Qrr

Reverse recovery

charge

0.707

µC

IRRM

Reverse recovery

current

10.1

trr

Reverse recovery

time

ISD = 11 A, di/dt = 100 A/µs,

VDD = 60 V, Tj = 150 °C (see

Figure 16: "Test circuit for

inductive load switching and

diode recovery times")

190

Qrr

Reverse recovery

charge

1.111

µC

IRRM

Reverse recovery

current

11.7

Notes:

(1)Pulse width is limited by safe operating area

(2)Pulse test: pulse duration = 300 µs, duty cycle 1.5%

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