STGP30H60DFB datasheet(7/21 Pages) STMICROELECTRONICS

部件名	STGP30H60DFB

功能描述	Trench gate field-stop IGBT, HB series 600 V, 30 A high speed

PDF	21 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

7 / 21 page

DocID026677 Rev 2

7/21

STGB30H60DFB, STGP30H60DFB

Electrical characteristics

Figure 8. Collector current vs. switching

frequency

Figure 9. Forward bias safe operating area

110

Ic [A]

f [kHz]

rectangular current shape,

(duty cycle=0.5, V

CC = 400V, R = 10

GE = 0/15 V, TJ =175°C)

Tc=80°C

Tc=100 °C

GIPG280120141713FSR

100

0.1

VCE(V)

(A)

100

10 μs

100 μs

1 ms

(single pulse T

C = 25°C,

TJ ≤ 175 °C; VGE=15V)

Vce(sat) limit

GIPG090720141330FSR

Figure 10. Transfer characteristics

Figure 11. Diode VF vs. forward current

VGE(V)

(A)

913

100

VCE =10 V

Tj= 25 °C

Tj= 175 °C

GIPG280120141330FSR

1.6

1.2

0.8

IF(A)

(V)

TJ= 175°C

TJ= 25°C

TJ= -40°C

2.8

2.4

GIPG090720141349FSR

Figure 12. Normalized VGE(th) vs junction

temperature

Figure 13. Normalized V(BR)CES vs. junction

temperature

VGE(th)

(norm)

0.8

0.7

0.6

-50

TJ(°C)

100

150

0.9

1.0

VCE= VGE

IC= 1mA

AM16060v1

V(BR)CES

(norm)

1.1

1.0

0.9

-50

TJ(°C)

100

150

IC= 2mA

AM16059v2

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