数据搜索系统,热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

STGP30H60DFB 数据表(PDF) 5 Page - STMicroelectronics

部件名 STGP30H60DFB
功能描述  Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
PDF  21 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGP30H60DFB 数据表(HTML) 5 Page - STMicroelectronics

  STGP30H60DFB Datasheet HTML 1Page - STMicroelectronics STGP30H60DFB Datasheet HTML 2Page - STMicroelectronics STGP30H60DFB Datasheet HTML 3Page - STMicroelectronics STGP30H60DFB Datasheet HTML 4Page - STMicroelectronics STGP30H60DFB Datasheet HTML 5Page - STMicroelectronics STGP30H60DFB Datasheet HTML 6Page - STMicroelectronics STGP30H60DFB Datasheet HTML 7Page - STMicroelectronics STGP30H60DFB Datasheet HTML 8Page - STMicroelectronics STGP30H60DFB Datasheet HTML 9Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 5 / 21 page
background image
DocID026677 Rev 2
5/21
STGB30H60DFB, STGP30H60DFB
Electrical characteristics
Table 6. Switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VCE = 400 V, IC = 30 A,
RG = 10 Ω, VGE = 15 V,
see Figure 28
-37
-
ns
tr
Current rise time
-
14.6
-
ns
(di/dt)on
Turn-on current slope
-
1643
-
A/µs
td(off)
Turn-off delay time
146
-
ns
tf
Current fall time
-
23
-
ns
Eon
Turn-on switching losses
-
383
-
µJ
Eoff
(1)
1.
Turn-off losses include also the tail of the collector current.
Turn-off switching losses
-
293
-
µJ
Ets
Total switching losses
-
676
-
µJ
td(on)
Turn-on delay time
VCE = 400 V, IC = 30 A,
RG = 10 Ω, VGE = 15 V,
TJ = 175 °C, see Figure 28
-35
-
ns
tr
Current rise time
-
16.1
-
ns
(di/dt)on
Turn-on current slope
-
1496
-
A/µs
td(off)
Turn-off delay time
-
158
-
ns
tf
Current fall time
-
65
-
ns
Eon
Turn-on switching losses
-
794
-
µJ
Eoff
(1)
Turn-off switching losses
-
572
-
µJ
Ets
Total switching losses
-
1366
-
µJ
Table 7. Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
trr
Reverse recovery time
IF = 30 A, VR = 400 V,
di/dt=1000 A/µs
,
VGE = 15 V,
(see Figure 28)
-53
-
ns
Qrr
Reverse recovery charge
-
384
-
nC
Irrm
Reverse recovery current
-
14.5
-
A
dIrr/ /dt
Peak rate of fall of reverse
recovery current during tb
-
788
-
A/µs
Err
Reverse recovery energy
-
104
-
µJ
trr
Reverse recovery time
IF = 30 A, VR = 400 V,
di/dt=1000 A/µs
,
VGE = 15 V,
TJ = 175 °C, (see Figure 28)
-
104
-
ns
Qrr
Reverse recovery charge
-
1352
-
nC
Irrm
Reverse recovery current
-
26
-
A
dIrr/ /dt
Peak rate of fall of reverse
recovery current during tb
-
310
-
A/µs
Err
Reverse recovery energy
-
407
-
µJ



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21


数据表 下载

Go To PDF Page


链接网址



ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   数据表链接    |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com