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STGD10NC60SD 数据表(PDF) 3 Page - STMicroelectronics

部件名 STGD10NC60SD
功能描述  10 A, 600 V fast IGBT
PDF  16 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGD10NC60SD 数据表(HTML) 3 Page - STMicroelectronics

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STGD10NC60SD, STGF10NC60SD
Electrical ratings
Doc ID 15847 Rev 2
3/16
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
DPAK
TO-220FP
VCES
Collector-emitter voltage (VGE = 0)
600
V
IC
(1)
1.
Calculated according to the iterative formula:
Continuous collector current at TC = 25°C
18
10
A
IC
(1)
Continuous collector current at TC = 100°C
10
5
A
ICL
(2)
2.
Vclamp = 80%,(VCES), Tj =150 °C, RG = 10 Ω, VGE = 15 V.
Turn-off latching current
14
A
ICP
(3)
3.
Pulse width limited by maximum junction temperature and turn-off within RBSOA.
Pulsed collector current
25
A
IF
Diode RMS forward current at TC=25 °C
10
A
IFSM
Surge non repetitive forward current tp = 10 ms
sinusoidal
20
A
VGE
Gate-emitter voltage
±20
V
PTOT
Total dissipation at TC = 25 °C
60
25
W
VISO
Isolation withstand voltage (RMS) from all three leads
to external heat sink (t = 1 sec; TC = 25 °C)
2500
V
Tj
Operating junction temperature
-55 to 150
°C
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
DPAK
TO-220FP
Rthj-case
Thermal resistance junction-case IGBT
2.08
5
°C/W
Thermal resistance junction-case diode
4.5
°C/W
Rthj-amb
Thermal resistance junction-ambient
100
62.5
°C/W
I
C TC
()
T
jmax
() TC
R
thj
c
V
CE sat
() max
() Tjmax
() IC TC
()
,
()
×
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=



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