STGD10NC60SD datasheet(4/16 Pages) STMICROELECTRONICS

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Electrical characteristics

STGD10NC60SD, STGF10NC60SD

4/16

Doc ID 15847 Rev 2

Electrical characteristics

(TJ=25°C unless otherwise specified)

Table 4.

Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

V(BR)CES

Collector-emitter breakdown

voltage (VGE= 0)

IC= 1 mA

600

VCE(sat)

Collector-emitter saturation

voltage

VGE= 15 V, IC= 5 A

VGE= 15 V, IC= 5 A, TJ= 125 °C

1.45

1.65

VGE(th)

Gate threshold voltage

VCE= VGE, IC= 250 µA

3.75

5.75

ICES

Collector cut-off current

(VGE=0)

VCE= 600 V

VCE=600 V, TJ=125 °C

150

µA

IGES

Gate-emitter leakage

(VCE=0)

VGE= ±20 V

±100

gfs

Forward transconductance

VCE = 15 V , IC = 5 A

3.5

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Coes

Cres

Input capacitance

Output capacitance

Reverse transfer

capacitance

VCE = 25 V, f = 1 MHz, VGE= 0

365

Qge

Qgc

Total gate charge

Gate-emitter charge

Gate-collector charge

VCE = 480 V, IC = 5 A,

VGE = 15 V

Figure 18

3.5

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