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STGD10NC60SD 数据表(PDF) 5 Page - STMicroelectronics

部件名 STGD10NC60SD
功能描述  10 A, 600 V fast IGBT
PDF  16 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGD10NC60SD 数据表(HTML) 5 Page - STMicroelectronics

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STGD10NC60SD, STGF10NC60SD
Electrical characteristics
Doc ID 15847 Rev 2
5/16
Table 6.
Switching on/off (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
VCC = 390 V, IC = 5 A
RG= 10 Ω, VGE= 15 V,
Figure 19
-
19
4
1330
-
ns
ns
A/µs
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
VCC = 390 V, IC = 5 A
RG= 10 Ω, VGE= 15 V,
TJ= 125°C
Figure 19
-
18
4.5
1000
-
ns
ns
A/µs
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
Vcc = 390 V, IC = 5 A,
RG = 10 Ω, VGE = 15 V,
Figure 19
-
100
160
205
-
ns
ns
ns
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
Vcc = 390 V, IC = 5 A,
RG = 10 Ω, VGE = 15 V,
TJ = 125°C
Figure 19
-
165
250
310
-
ns
ns
ns
Table 7.
Switching energy (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Eon
(1)
Eoff
(2)
Ets
1.
Eon is the turn-on losses when a typical diode is used in the test circuit in
Figure 17. If the IGBT is offered
in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs and diode are at the
same temperature.
2.
Turn-off losses included also include also the tail of the collector current.
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 480 V, IC = 5 A
RG= 10 Ω, VGE= 15 V,
Figure 17
-
60
340
400
-
µJ
µJ
µJ
Eon (1)
Eoff
(2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 480 V, IC = 5 A
RG= 10 Ω, VGE= 15 V,
TJ= 125°C
Figure 17
-
90
540
630
-
µJ
µJ
µJ
Table 8.
Collector-emitter diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
VF
Forward on-voltage
IF=5 A
IF=5 A, TJ=125 °C
-
2
1.65
2.45
V
V
trr
Qrr
Irrm
Reverse recovery time
Reverse recovery charge
Reverse recovery current
IF=5 A, VR=40 V,
di/dt=100 A/µs
Figure 20
-
22
14
1.3
ns
nC
A
trr
Qrr
Irrm
Reverse recovery time
Reverse recovery charge
Reverse recovery current
IF=5 A, VR=40 V,
TJ=125 °C, di/dt=100 A/µs
Figure 20
-
34
35
2.1
ns
nC
A



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