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STGFW30V60DF 数据表(PDF) 9 Page - STMicroelectronics

部件名 STGFW30V60DF
功能描述  Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
PDF  15 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGFW30V60DF 数据表(HTML) 9 Page - STMicroelectronics

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DocID026149 Rev 1
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STGFW30V60DF
Electrical characteristics
Figure 20. Reverse recovery current vs. diode
current slope
Figure 21. Reverse recovery time vs. diode
current slope
Figure 22. Reverse recovery charge vs. diode
current slope
Figure 23. Reverse recovery energy vs. diode
current slope
Figure 24. Safe operating area
Irm(A)
0
di/dt (A/μs)
500
10
1000
Vr=400V
IF=30A
Tj=175°C
20
30
40
0
1500
Tj=25°C
AM17429v1
trr(μs)
0
di/dt (A/μs)
500
1000
1500 2000
Vr=400V
IF=30A
Tj=175°C
50
100
150
200
0
2500
Tj=25°C
AM17430v1
Qrr(nC)
0
di/dt (A/μs)
500
1000
1500 2000
Vr=400V
IF=30A
Tj=175°C
500
1000
1500
2000
0
2500
Tj=25°C
AM17431v1
Err(μJ)
0
di/dt (A/μs)
500
1000
1500 2000
Vr=400V
IF=30A
Tj=175°C
200
400
600
800
1000
0
2500
Tj=25°C
AM17432v1
IC
100
10
1
(A)
10
VCE(V)
1
10μs
100μs
1ms
100
Single pulse, Tc=25°C
Tj<175°C, VGE=15V
0.01
0.1
AM17416v2



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