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STGFW30V60DF 数据表(PDF) 1 Page - STMicroelectronics |
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STGFW30V60DF 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 15 page ![]() This is information on a product in full production. March 2014 DocID026149 Rev 1 1/15 15 STGFW30V60DF Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data Figure 1. Internal schematic diagram Features • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.85 V (typ.) @ IC = 30 A • Tight parameters distribution • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode Applications • Photovoltaic inverters • Uninterruptible power supply • Welding • Power factor correction • Very high frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. C (2) G (1) E (3) TO-3PF 1 1 1 1 2 3 Table 1. Device summary Order code Marking Package Packaging STGFW30V60DF GFW30V60DF TO-3PF Tube www.st.com |
类似零件编号 - STGFW30V60DF |
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类似说明 - STGFW30V60DF |
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