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STGFW30V60DF 数据表(PDF) 5 Page - STMicroelectronics |
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STGFW30V60DF 数据表(HTML) 5 Page - STMicroelectronics |
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5 / 15 page ![]() DocID026149 Rev 1 5/15 STGFW30V60DF Electrical characteristics Table 6. IGBT switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VCE = 400 V, IC = 30 A, RG = 10 Ω, VGE = 15 V, see Figure 27 -45 - ns tr Current rise time - 16 - ns (di/dt)on Turn-on current slope - 1500 - A/µs td(off) Turn-off delay time - 189 - ns tf Current fall time - 19 - ns Eon (1) 1. Energy losses include reverse recovery of the diode. Turn-on switching losses - 383 - µJ Eoff (2) 2. Turn-off losses include also the tail of the collector current. Turn-off switching losses - 233 - µJ Ets Total switching losses - 616 - µJ td(on) Turn-on delay time VCE = 400 V, IC = 30 A, RG = 10 Ω, VGE = 15 V, TJ = 175 °C, see Figure 27 -42 - ns tr Current rise time - 17 - ns (di/dt)on Turn-on current slope - 1337 - A/µs td(off) Turn-off delay time - 193 - ns tf Current fall time - 32 - ns Eon (1) Turn-on switching losses - 794 - µJ Eoff (2) Turn-off switching losses - 378 - µJ Ets Total switching losses - 1172 - µJ Table 7. Diode switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit trr Reverse recovery time IF = 30 A, VR = 400 V, di/dt=1000 A/µs , VGE = 15 V, (see Figure 27) -53 - ns Qrr Reverse recovery charge - 384 - nC Irrm Reverse recovery current - 14.5 - A dIrr/ /dt Peak rate of fall of reverse recovery current during tb - 788 - A/µs Err Reverse recovery energy - 104 - µJ trr Reverse recovery time IF = 30 A, VR = 400 V, di/dt=1000 A/µs , VGE = 15 V, TJ = 175 °C, (see Figure 27) - 104 - ns Qrr Reverse recovery charge - 1352 - nC Irrm Reverse recovery current - 26 - A dIrr/ /dt Peak rate of fall of reverse recovery current during tb - 310 - A/µs Err Reverse recovery energy - 407 - µJ |
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