STGWT80V60DF datasheet(8/18 Pages) STMICROELECTRONICS

8 / 18 page

Electrical characteristics

STGW80V60DF, STGWT80V60DF

8/18

DocID024362 Rev 2

Figure 8. Collector current vs. switching

frequency

Figure 9. Forward bias safe operating area

Figure 10. Transfer characteristics

Figure 11. Diode VF vs. forward current

Figure 12. Normalized VGE(th) vs junction

temperature

Figure 13. Normalized V(BR)CES vs. junction

temperature

120

160

110

Ic [A]

f [kHz]

rectangular current shape,

(duty cycle=0.5, V

CC = 400V, R =4.7

GE = 0/15 V, TJ =175°C)

Tc=80°C

Tc=100 °C

GIPD041120131144FSR

100

VCE(V)

(A)

10 μs

100 μs

1 ms

Single pulse

Tc= 25°C, TJ<= 175°C

VGE= 15V

100

GIPD041120131152FSR

120

VGE(V)

(A)

TJ=175°C

TJ=-40°C

TJ=25°C

VCE=5V

GIPD041120131324FSR

1.6

1.2

0.8

IF(A)

(V)

TJ= 175°C

100

TJ= 25°C

TJ= -40°C

120 140

2.4

GIPD041120131336FSR

VGE(th)

1.1

1.0

0.6

-50

TJ(°C)

(norm)

100

150

IC= 1mA

VCE= VGE

0.7

0.8

0.9

GIPD041120131351FSR

V(BR)CES

1.1

1.0

0.9

-50

TJ(°C)

(norm)

100

150

IC= 2mA

GIPD041120131353FSR

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