DocID024362 Rev 2

5/18

STGW80V60DF, STGWT80V60DF

Electrical characteristics

Table 5. Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

C

ies

Input capacitance

V

CE

= 25 V, f = 1 MHz,

V

GE

= 0

-

10800

-

nF

C

oes

Output capacitance

-

390

-

pF

C

res

Reverse transfer

capacitance

-

220

-

pF

Q

g

Total gate charge

V

CC

= 480 V, I

C

= 80 A,

V

GE

= 15 V, see

Figure 29

-

448

-

nC

Q

ge

Gate-emitter charge

-

76

-

nC

Q

gc

Gate-collector charge

-

184

-

nC

Table 6. IGBT switching characteristics (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

t

d(on)

Turn-on delay time

V

CE

= 400 V, I

C

= 80 A,

R

G

= 5

Ω, V

GE

= 15 V,

see

Figure 28

-60

-

ns

t

r

Current rise time

-

30

-

ns

(di/dt)

on

Turn-on current slope

-

2200

-

A/μs

t

d(off)

Turn-off delay time

-

220

-

ns

t

f

Current fall time

-

17

-

ns

E

on

(1)

1.

Energy losses include reverse recovery of the diode.

Turn-on switching losses

-

1.8

-

mJ

E

off

(2)

2.

Turn-off losses include also the tail of the collector current.

Turn-off switching losses

-

1

-

mJ

E

ts

Total switching losses

-

2.8

-

mJ

t

d(on)

Turn-on delay time

V

CE

= 400 V, I

C

= 80 A,

R

G

= 5

Ω, V

GE

= 15 V

,

T

J

= 175 °C, see

Figure 28

-60

-

ns

t

r

Current rise time

-

30

-

ns

(di/dt)

on

Turn-on current slope

-

2100

-

A/μs

t

d(off)

Turn-off delay time

-

240

-

ns

t

f

Current fall time

-

22

-

ns

E

on

(1)

Turn-on switching losses

-

3.8

-

mJ

E

off

(2)

Turn-off switching losses

-

1.25

-

mJ

E

ts

Total switching losses

-

5.05

-

mJ