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STGWT80V60DF 数据表(PDF) 3 Page - STMicroelectronics

部件名 STGWT80V60DF
功能描述  Low thermal resistance
PDF  18 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGWT80V60DF 数据表(HTML) 3 Page - STMicroelectronics

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DocID024362 Rev 2
3/18
STGW80V60DF, STGWT80V60DF
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
V
CES
Collector-emitter voltage (V
GE
= 0)
600
V
I
C
Continuous collector current at T
C
= 25 °C
120
(1)
1.
Current level is limited by bond wires
A
I
C
Continuous collector current at T
C
= 100 °C
80
A
I
CP
(2)
2.
Pulse width limited by maximum junction temperature
Pulsed collector current
240
A
V
GE
Gate-emitter voltage
±20
V
I
F
Continuous forward current at T
C
= 25 °C
120
(1)
A
I
F
Continuous forward current at T
C
= 100 °C
80
A
I
FP
(2)
Pulsed forward current
360
A
P
TOT
Total dissipation at T
C
= 25 °C
469
W
T
STG
Storage temperature range
- 55 to 150
°C
T
J
Operating junction temperature
- 55 to 175
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
R
thJC
Thermal resistance junction-case IGBT
0.32
°C/W
R
thJC
Thermal resistance junction-case diode
0.66
°C/W
R
thJA
Thermal resistance junction-ambient
50
°C/W



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