STGY80H65DFB datasheet(7/22 Pages) STMICROELECTRONICS

部件名	STGY80H65DFB

功能描述	Trench gate field-stop IGBT, HB series 650 V, 80 A high speed

PDF	22 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

7 / 22 page

DocID024366 Rev 6

7/22

STGY80H65DFB, STGW80H65DFB, STGWA80H65DFB, STGWT80H65DFB

Electrical characteris-

Figure 8. VCE(sat) vs. collector current

Figure 9. Forward bias safe operating area

VCE(sat)

1.4

1.2

0.8

IC(A)

(V)

1.6

1.8

2.2

VGE= 15V

TJ= 175°C

TJ= 25°C

TJ= -40°C

2.4

2.6

100 120 140

GIPD160920131029FSR

100

0.1

VCE(V)

(A)

100

10μs

100μs

1ms

Single pulse

Tc= 25°C, TJ ≤ 175°C

VGE= 15V

GIPD160920131115FSR

Figure 10. Diode VF vs. forward current

Figure 11. Normalized V(BR)CES vs. junction

temperature

1.6

1.2

0.8

IF(A)

(V)

TJ= 175°C

25°C

-40°C

100 120 140

2.4

GIPD160920131135FSR

V(BR)CES

1.1

0.9

-50

TJ(°C)

(norm)

100

150

IC= 2mA

GIPD160920131144FSR

Figure 12. Normalized VGE(th) vs. junction

temperature

Figure 13. Gate charge vs. gate-emitter voltage

VGE

0.8

0.7

0.6

-50

TJ(°C)

(norm)

100

150

0.9

1.1

IC= 1mA

GIPD160920131151FSR

VGE

0Qg(nC)

(V)

100

200

300

400

IC= 80A

VCC= 520V

GIPD160920131156FSR

STGY80H65DFB 数据表(PDF) 7 Page - STMicroelectronics

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